The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces
Atomistic modeling shows that Cu–Nb and Cu–V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼ 5 at. % and ∼ 0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is require...
| Main Authors: | , , , , , |
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| Outros autores: | |
| Formato: | Artigo |
| Idioma: | en_US |
| Publicado: |
American Institute of Physics
2012
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| Acceso en liña: | http://hdl.handle.net/1721.1/69035 https://orcid.org/0000-0003-3949-0441 |
| Summary: | Atomistic modeling shows that Cu–Nb and Cu–V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼ 5 at. % and ∼ 0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at Cu–Nb interfaces than in Cu–V interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors. |
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