The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces
Atomistic modeling shows that Cu–Nb and Cu–V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼ 5 at. % and ∼ 0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is require...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics
2012
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| Online Access: | http://hdl.handle.net/1721.1/69035 https://orcid.org/0000-0003-3949-0441 |
| _version_ | 1811096660818788352 |
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| author | Demkowicz, Michael J. Usov, I. Bhattacharyya, D. Wang, Y. Q. Nastasi, M. Misra, Amit |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Demkowicz, Michael J. Usov, I. Bhattacharyya, D. Wang, Y. Q. Nastasi, M. Misra, Amit |
| author_sort | Demkowicz, Michael J. |
| collection | MIT |
| description | Atomistic modeling shows that Cu–Nb and Cu–V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼ 5 at. % and ∼ 0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at Cu–Nb interfaces than in Cu–V interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors. |
| first_indexed | 2024-09-23T16:47:01Z |
| format | Article |
| id | mit-1721.1/69035 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T16:47:01Z |
| publishDate | 2012 |
| publisher | American Institute of Physics |
| record_format | dspace |
| spelling | mit-1721.1/690352022-10-03T08:15:35Z The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces Demkowicz, Michael J. Usov, I. Bhattacharyya, D. Wang, Y. Q. Nastasi, M. Misra, Amit Massachusetts Institute of Technology. Department of Materials Science and Engineering Demkowicz, Michael J. Demkowicz, Michael J. Atomistic modeling shows that Cu–Nb and Cu–V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼ 5 at. % and ∼ 0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at Cu–Nb interfaces than in Cu–V interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors. United States. Dept. of Energy. Office of Basic Energy Sciences (award 2008LANL1026) 2012-02-07T20:54:31Z 2012-02-07T20:54:31Z 2010-10 2010-08 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/69035 Demkowicz, M. J. et al. “The effect of excess atomic volume on He bubble formation at fcc–bcc interfaces.” Applied Physics Letters 97.16 (2010): 161903. https://orcid.org/0000-0003-3949-0441 en_US http://dx.doi.org/10.1063/1.3502594 Applied Physics Letters Creative Commons Attribution-Noncommercial-Share Alike 3.0 http://creativecommons.org/licenses/by-nc-sa/3.0/ application/pdf American Institute of Physics Prof. Demkowicz |
| spellingShingle | Demkowicz, Michael J. Usov, I. Bhattacharyya, D. Wang, Y. Q. Nastasi, M. Misra, Amit The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces |
| title | The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces |
| title_full | The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces |
| title_fullStr | The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces |
| title_full_unstemmed | The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces |
| title_short | The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces |
| title_sort | effect of excess atomic volume on he bubble formation at fcc bcc interfaces |
| url | http://hdl.handle.net/1721.1/69035 https://orcid.org/0000-0003-3949-0441 |
| work_keys_str_mv | AT demkowiczmichaelj theeffectofexcessatomicvolumeonhebubbleformationatfccbccinterfaces AT usovi theeffectofexcessatomicvolumeonhebubbleformationatfccbccinterfaces AT bhattacharyyad theeffectofexcessatomicvolumeonhebubbleformationatfccbccinterfaces AT wangyq theeffectofexcessatomicvolumeonhebubbleformationatfccbccinterfaces AT nastasim theeffectofexcessatomicvolumeonhebubbleformationatfccbccinterfaces AT misraamit theeffectofexcessatomicvolumeonhebubbleformationatfccbccinterfaces AT demkowiczmichaelj effectofexcessatomicvolumeonhebubbleformationatfccbccinterfaces AT usovi effectofexcessatomicvolumeonhebubbleformationatfccbccinterfaces AT bhattacharyyad effectofexcessatomicvolumeonhebubbleformationatfccbccinterfaces AT wangyq effectofexcessatomicvolumeonhebubbleformationatfccbccinterfaces AT nastasim effectofexcessatomicvolumeonhebubbleformationatfccbccinterfaces AT misraamit effectofexcessatomicvolumeonhebubbleformationatfccbccinterfaces |