Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

We use a reaction–diffusion model to demonstrate that buried interfaces in polycrystalline composites simultaneously reduce both the concentrations and the fluxes of radiation-induced defects. The steady-state radiation-induced defect concentrations, however, are highly sensitive to the interface si...

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Bibliographic Details
Main Authors: Hoagland, R. G., Uberuaga, B. P., Misra, Amit, Demkowicz, Michael J.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Physical Society (APS) 2012
Online Access:http://hdl.handle.net/1721.1/69141
https://orcid.org/0000-0003-3949-0441