The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures

The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures

Quantum dots in Si/SiGe heterostructures are expected to have relatively long electron spin decoherence times, because of the low density of nuclear spins and the weak coupling between nuclear and electron spins. We provide experimental evidence suggesting that electron motion in a conductive layer...

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Bibliographic Details
Main Authors: Lin, Xi, Hu, Jingshi, Lai, Andrew Pan, Zhang, Zhenning, MacLean, Kenneth, Dillard, Colin R., Xie, Ya-Hong, Kastner, Marc
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2012
Online Access:http://hdl.handle.net/1721.1/71015
https://orcid.org/0000-0001-7641-5438

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http://hdl.handle.net/1721.1/71015
https://orcid.org/0000-0001-7641-5438

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