The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures
Quantum dots in Si/SiGe heterostructures are expected to have relatively long electron spin decoherence times, because of the low density of nuclear spins and the weak coupling between nuclear and electron spins. We provide experimental evidence suggesting that electron motion in a conductive layer...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2012
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| Online Access: | http://hdl.handle.net/1721.1/71015 https://orcid.org/0000-0001-7641-5438 |