Structural origins of intrinsic stress in amorphous silicon thin films

Structural origins of intrinsic stress in amorphous silicon thin films

Hydrogenated amorphous silicon (a-Si:H) refers to a broad class of atomic configurations, sharing a lack of long-range order, but varying significantly in material properties, including optical constants, porosity, hydrogen content, and intrinsic stress. It has long been known that deposition condit...

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Bibliographic Details
Main Authors: Johlin, Eric Carl, Castro-Galnares, Sebastián, Bertoni, Mariana I., Grossman, Jeffrey C., Buonassisi, Tonio, Tabet, Nouar, Abdallah, Amir, Asafa, Tesleem, Said, Syed
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Physical Society 2012
Online Access:http://hdl.handle.net/1721.1/71270
https://orcid.org/0000-0003-1281-2359
https://orcid.org/0000-0001-8345-4937

Internet

http://hdl.handle.net/1721.1/71270
https://orcid.org/0000-0003-1281-2359
https://orcid.org/0000-0001-8345-4937

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