Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin

Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin

Hyperdoping has emerged as a promising method for designing semiconductors with unique optical and electronic properties, although such properties currently lack a clear microscopic explanation. Combining computational and experimental evidence, we probe the origin of sub–band-gap optical absorption...

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Bibliographic Details
Main Authors: Ertekin, Elif, Winkler, Mark Thomas, Recht, Daniel, Said, Aurore J., Aziz, Michael J., Grossman, Jeffrey C., Buonassisi, Anthony
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Physical Society 2012
Online Access:http://hdl.handle.net/1721.1/71567
https://orcid.org/0000-0003-1281-2359
https://orcid.org/0000-0001-8345-4937

Internet

http://hdl.handle.net/1721.1/71567
https://orcid.org/0000-0003-1281-2359
https://orcid.org/0000-0001-8345-4937

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