Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

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Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantum-mechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to...

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Bibliographic Details
Main Authors: Teherani, James T., Chern, Winston, Antoniadis, Dimitri A., Hoyt, Judy L., Ruiz, Liliana, Poweleit, Christian D., Menendez, Jose
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Physical Society 2012
Online Access:http://hdl.handle.net/1721.1/71597
https://orcid.org/0000-0002-7778-8073
https://orcid.org/0000-0002-5452-8009
https://orcid.org/0000-0002-4836-6525

Internet

http://hdl.handle.net/1721.1/71597
https://orcid.org/0000-0002-7778-8073
https://orcid.org/0000-0002-5452-8009
https://orcid.org/0000-0002-4836-6525

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