Interface structure and film polarization in epitaxial SrTiO[subscript 3]/Si(001)
Phenomenological models suggest that thin epitaxial SrTiO[subscript 3] films on silicon will exhibit ferroelectric behavior as a result of compressive strain. However, such models do not include atomic-scale interface effects, which can dramatically alter the predicted behavior. In this paper, we us...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Physical Society
2012
|
| Online Access: | http://hdl.handle.net/1721.1/71736 https://orcid.org/0000-0002-4347-0139 |