Spectral selective mid-infrared detector on a silicon platform
We report the design, fabrication, and characterization of spectral selective mid-infrared PbTe photodetector pixels monolithically integrated on a silicon platform. We demonstrate spectral selectivity with a peak responsivity of 65.4 V/W.
| Main Authors: | , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
|
| Online Access: | http://hdl.handle.net/1721.1/71799 https://orcid.org/0000-0002-7233-3918 https://orcid.org/0000-0002-0769-0652 https://orcid.org/0000-0002-3913-6189 |