Hole mobility enhancement in In0.41 Ga0.59 Sb quantum-well field-effect transistors

Hole mobility enhancement in In0.41 Ga0.59 Sb quantum-well field-effect transistors

The impact of 〈110〉 uniaxial strain on the characteristics of p-channel In[subscript 0.41]Ga[subscript 0.59]Sb quantum-well field-effect transistors (QW-FETs) is studied through chip-bending experiments. Uniaxial strain is found to affect the linear-regime drain current and the threshold voltage of...

Full description

Bibliographic Details
Main Authors: Xia, Ling, Boos, J. Brad, Bennett, Brian R., Ancona, Mario G., del Alamo, Jesus A.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2012
Online Access:http://hdl.handle.net/1721.1/71941

Internet

http://hdl.handle.net/1721.1/71941

Similar Items