Analytical model for RF power performance of deeply scaled CMOS devices
This paper presents a first order model for RF power of deeply scaled CMOS. The model highlights the role of device on-resistance in determining the maximum RF power. We show excellent agreement between the model and the measured data on 45 nm CMOS devices across a wide range of device widths, under...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/71960 |