Analytical model for RF power performance of deeply scaled CMOS devices
This paper presents a first order model for RF power of deeply scaled CMOS. The model highlights the role of device on-resistance in determining the maximum RF power. We show excellent agreement between the model and the measured data on 45 nm CMOS devices across a wide range of device widths, under...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/71960 |
| _version_ | 1811088579000008704 |
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| author | Gogineni, Usha del Alamo, Jesus A. Valdes-Garcia, Alberto |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Gogineni, Usha del Alamo, Jesus A. Valdes-Garcia, Alberto |
| author_sort | Gogineni, Usha |
| collection | MIT |
| description | This paper presents a first order model for RF power of deeply scaled CMOS. The model highlights the role of device on-resistance in determining the maximum RF power. We show excellent agreement between the model and the measured data on 45 nm CMOS devices across a wide range of device widths, under both maximum output power and maximum PAE conditions. The model allows circuit designers to quickly estimate the power and efficiency of a device layout without need for complicated compact models or simulations. |
| first_indexed | 2024-09-23T14:04:15Z |
| format | Article |
| id | mit-1721.1/71960 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:04:15Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/719602022-09-28T18:08:35Z Analytical model for RF power performance of deeply scaled CMOS devices Gogineni, Usha del Alamo, Jesus A. Valdes-Garcia, Alberto Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science del Alamo, Jesus A. Gogineni, Usha del Alamo, Jesus A. This paper presents a first order model for RF power of deeply scaled CMOS. The model highlights the role of device on-resistance in determining the maximum RF power. We show excellent agreement between the model and the measured data on 45 nm CMOS devices across a wide range of device widths, under both maximum output power and maximum PAE conditions. The model allows circuit designers to quickly estimate the power and efficiency of a device layout without need for complicated compact models or simulations. Semiconductor Research Corporation. (Grant Number 2007-HJ-1661) 2012-08-02T18:45:26Z 2012-08-02T18:45:26Z 2011-07 2011-06 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-8291-7 978-1-4244-8293-1 1529-2517 http://hdl.handle.net/1721.1/71960 Gogineni, Usha, Jesus del Alamo, and Alberto Valdes-Garcia. “Analytical Model for RF Power Performance of Deeply Scaled CMOS Devices.” IEEE Radio Frequency Integrated Circuits Symposium, 2011. 2011 1–4. en_US http://dx.doi.org/10.1109/RFIC.2011.5940647 2011 IEEE Radio Frequency Integrated Circuits Symposium Creative Commons Attribution-Noncommercial-Share Alike 3.0 http://creativecommons.org/licenses/by-nc-sa/3.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) MIT web domain |
| spellingShingle | Gogineni, Usha del Alamo, Jesus A. Valdes-Garcia, Alberto Analytical model for RF power performance of deeply scaled CMOS devices |
| title | Analytical model for RF power performance of deeply scaled CMOS devices |
| title_full | Analytical model for RF power performance of deeply scaled CMOS devices |
| title_fullStr | Analytical model for RF power performance of deeply scaled CMOS devices |
| title_full_unstemmed | Analytical model for RF power performance of deeply scaled CMOS devices |
| title_short | Analytical model for RF power performance of deeply scaled CMOS devices |
| title_sort | analytical model for rf power performance of deeply scaled cmos devices |
| url | http://hdl.handle.net/1721.1/71960 |
| work_keys_str_mv | AT gogineniusha analyticalmodelforrfpowerperformanceofdeeplyscaledcmosdevices AT delalamojesusa analyticalmodelforrfpowerperformanceofdeeplyscaledcmosdevices AT valdesgarciaalberto analyticalmodelforrfpowerperformanceofdeeplyscaledcmosdevices |