Analytical model for RF power performance of deeply scaled CMOS devices

Analytical model for RF power performance of deeply scaled CMOS devices

This paper presents a first order model for RF power of deeply scaled CMOS. The model highlights the role of device on-resistance in determining the maximum RF power. We show excellent agreement between the model and the measured data on 45 nm CMOS devices across a wide range of device widths, under...

书目详细资料
Main Authors:	Gogineni, Usha, del Alamo, Jesus A., Valdes-Garcia, Alberto
其他作者:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
格式:	文件
语言:	en_US
出版:	Institute of Electrical and Electronics Engineers (IEEE) 2012
在线阅读:	http://hdl.handle.net/1721.1/71960

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