Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction
n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resoluti...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/72676 https://orcid.org/0000-0003-0420-2235 https://orcid.org/0000-0002-2190-563X |