Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction
n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resoluti...
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| Formato: | Artigo |
| Idioma: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Acceso en liña: | http://hdl.handle.net/1721.1/72676 https://orcid.org/0000-0003-0420-2235 https://orcid.org/0000-0002-2190-563X |
| _version_ | 1826203447595106304 |
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| author | Gao, Feng Lo, Hsin-Yi Ram, Rajeev J. Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Gao, Feng Lo, Hsin-Yi Ram, Rajeev J. Palacios, Tomas |
| author_sort | Gao, Feng |
| collection | MIT |
| description | n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resolution thermo-reflectance measurements, obtaining excellent agreement. |
| first_indexed | 2024-09-23T12:37:31Z |
| format | Article |
| id | mit-1721.1/72676 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:37:31Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/726762022-10-01T10:06:03Z Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction Gao, Feng Lo, Hsin-Yi Ram, Rajeev J. Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Materials Science and Engineering Palacios, Tomas Gao, Feng Lo, Hsin-Yi Ram, Rajeev J. Palacios, Tomas n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resolution thermo-reflectance measurements, obtaining excellent agreement. United States. Office of Naval Research 2012-09-12T19:40:20Z 2012-09-12T19:40:20Z 2010-06 2010-06 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-6563-7 978-1-4244-6562-0 1548-3770 http://hdl.handle.net/1721.1/72676 Gao, Feng et al. “Self-consistent Electro-thermal Simulation of AlGaN/GaN HEMTs for Reliability Prediction.” Device Research Conference (DRC), 2010. 127–128. © Copyright 2010 IEEE https://orcid.org/0000-0003-0420-2235 https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.1109/DRC.2010.5551870 Proceedings of the Device Research Conference (DRC), 2010 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers (IEEE) IEEE |
| spellingShingle | Gao, Feng Lo, Hsin-Yi Ram, Rajeev J. Palacios, Tomas Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction |
| title | Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction |
| title_full | Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction |
| title_fullStr | Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction |
| title_full_unstemmed | Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction |
| title_short | Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction |
| title_sort | self consistent electro thermal simulation of aigan gan hemts for reliability prediction |
| url | http://hdl.handle.net/1721.1/72676 https://orcid.org/0000-0003-0420-2235 https://orcid.org/0000-0002-2190-563X |
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