Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction

n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resoluti...

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Main Authors: Gao, Feng, Lo, Hsin-Yi, Ram, Rajeev J., Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers (IEEE) 2012
Online Access:http://hdl.handle.net/1721.1/72676
https://orcid.org/0000-0003-0420-2235
https://orcid.org/0000-0002-2190-563X
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author Gao, Feng
Lo, Hsin-Yi
Ram, Rajeev J.
Palacios, Tomas
author2 Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
author_facet Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Gao, Feng
Lo, Hsin-Yi
Ram, Rajeev J.
Palacios, Tomas
author_sort Gao, Feng
collection MIT
description n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resolution thermo-reflectance measurements, obtaining excellent agreement.
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spelling mit-1721.1/726762022-10-01T10:06:03Z Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction Gao, Feng Lo, Hsin-Yi Ram, Rajeev J. Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Materials Science and Engineering Palacios, Tomas Gao, Feng Lo, Hsin-Yi Ram, Rajeev J. Palacios, Tomas n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resolution thermo-reflectance measurements, obtaining excellent agreement. United States. Office of Naval Research 2012-09-12T19:40:20Z 2012-09-12T19:40:20Z 2010-06 2010-06 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-6563-7 978-1-4244-6562-0 1548-3770 http://hdl.handle.net/1721.1/72676 Gao, Feng et al. “Self-consistent Electro-thermal Simulation of AlGaN/GaN HEMTs for Reliability Prediction.” Device Research Conference (DRC), 2010. 127–128. © Copyright 2010 IEEE https://orcid.org/0000-0003-0420-2235 https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.1109/DRC.2010.5551870 Proceedings of the Device Research Conference (DRC), 2010 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers (IEEE) IEEE
spellingShingle Gao, Feng
Lo, Hsin-Yi
Ram, Rajeev J.
Palacios, Tomas
Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction
title Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction
title_full Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction
title_fullStr Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction
title_full_unstemmed Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction
title_short Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction
title_sort self consistent electro thermal simulation of aigan gan hemts for reliability prediction
url http://hdl.handle.net/1721.1/72676
https://orcid.org/0000-0003-0420-2235
https://orcid.org/0000-0002-2190-563X
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