Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction

Self-consistent electro-thermal simulation of AIGaN/GaN HEMTs for reliability prediction

n this paper, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the reliability of these devices as a function of bias voltage and operating temperature. In addition, we have compared the numerical results of our simulations with high resoluti...

书目详细资料
Main Authors:	Gao, Feng, Lo, Hsin-Yi, Ram, Rajeev J., Palacios, Tomas
其他作者:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
格式:	文件
语言:	en_US
出版:	Institute of Electrical and Electronics Engineers (IEEE) 2012
在线阅读:	http://hdl.handle.net/1721.1/72676 https://orcid.org/0000-0003-0420-2235 https://orcid.org/0000-0002-2190-563X

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