60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics
We have developed a new self-aligned gate technology for InGaAs High Electron Mobility Transistors with non-alloyed Mo-based ohmic contacts and a very low parasitic capacitance gate design. The new process delivers a contact resistance of 7 Ohm-μm and a source resistance of 147 Ohm-μm. The non-alloy...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/73120 |