| Summary: | We have developed a new self-aligned gate technology for InGaAs High Electron Mobility Transistors with non-alloyed Mo-based ohmic contacts and a very low parasitic capacitance gate design. The new process delivers a contact resistance of 7 Ohm-μm and a source resistance of 147 Ohm-μm. The non-alloyed Mo-based ohmic contacts show excellent thermal stability up to 600°C. Using this technology, we have demonstrated a 60 nm gate length self-aligned InGaAs HEMT with g[subscript m] = 2.1 mS/μm at V[subscript DS] = 0.5 V, and f[subscript T] = 580 GHz and f[subscript max] = 675 GHz at V[subscript DS] = 0.6 V. These are all record or near record values for this gate length.
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