50-nm E-mode In[subscript 0.7]Ga[subscript 0.3]As PHEMTs on 100-mm InP substrate with f[subscript max] > 1 THz
We have demonstrated 50-nm enhancement-mode (E-mode) In[subscript 0.7]Ga[subscript 0.3]As PHEMTs with f[subscript max] in excess of 1 THz. The devices feature a Pt gate sinking process to effectively thin down the In[subscript 0.52]Al[subscript 0.48]As barrier layer, together with a two-step recess...
Main Authors: | , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | en_US |
Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
|
Online Access: | http://hdl.handle.net/1721.1/73128 |