Metrology for electron-beam lithography and resist contrast at the sub-10 nm scale
Exploring the resolution limit of electron-beam lithography is of great interest both scientifically and technologically. However, when electron-beam lithography approaches its resolution limit, imaging and metrology of the fabricated structures by using standard scanning electron microscopy become...
| Main Authors: | , , , , , |
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| 其他作者: | |
| 格式: | 文件 |
| 语言: | en_US |
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American Vacuum Society (AVS)
2012
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| 在线阅读: | http://hdl.handle.net/1721.1/73187 https://orcid.org/0000-0002-9129-4731 https://orcid.org/0000-0001-7453-9031 |