Sub-10-nm half-pitch electron-beam lithography by using poly(methyl methacrylate) as a negative resist
Developing high-resolution resists and processes for electron-beam lithography is of great importance for high-density magnetic storage, integrated circuits, and nanoelectronic and nanophotonic devices. Until now, hydrogen silsesquioxane (HSQ) and calixarene were the only two reported negative resis...
| Main Authors: | , , , , , |
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| 其他作者: | |
| 格式: | 文件 |
| 语言: | en_US |
| 出版: |
American Vacuum Society (AVS)
2012
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| 在线阅读: | http://hdl.handle.net/1721.1/73447 https://orcid.org/0000-0002-9129-4731 https://orcid.org/0000-0001-7453-9031 |