Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a three-terminal bre...

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Detalhes bibliográficos
Principais autores: Lu, Bin, Palacios, Tomas, Piner, Edwin L.
Outros Autores: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Formato: Artigo
Idioma:en_US
Publicado em: Institute of Electrical and Electronics Engineers (IEEE) 2012
Acesso em linha:http://hdl.handle.net/1721.1/73494
https://orcid.org/0000-0002-2190-563X
https://orcid.org/0000-0003-2208-0665