Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a three-terminal bre...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/73494 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |