Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a three-terminal bre...
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/73494 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
| _version_ | 1826214055060176896 |
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| author | Lu, Bin Palacios, Tomas Piner, Edwin L. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Lu, Bin Palacios, Tomas Piner, Edwin L. |
| author_sort | Lu, Bin |
| collection | MIT |
| description | In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a three-terminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed a maximum breakdown voltage below 600 V. The improvement of the breakdown voltage has been associated with the planar contact morphology and lack of metal spikes in the Schottky-drain metallization. |
| first_indexed | 2024-09-23T15:59:05Z |
| format | Article |
| id | mit-1721.1/73494 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:59:05Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/734942022-10-02T05:31:16Z Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors Lu, Bin Palacios, Tomas Piner, Edwin L. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Lu, Bin Palacios, Tomas In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a three-terminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed a maximum breakdown voltage below 600 V. The improvement of the breakdown voltage has been associated with the planar contact morphology and lack of metal spikes in the Schottky-drain metallization. 2012-10-01T14:22:47Z 2012-10-01T14:22:47Z 2010-02 2009-08 Article http://purl.org/eprint/type/JournalArticle 0741-3106 http://hdl.handle.net/1721.1/73494 Bin Lu, E.L. Piner, and T. Palacios. “Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors.” IEEE Electron Device Letters 31.4 (2010): 302–304. © Copyright 2010 IEEE https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 en_US http://dx.doi.org/10.1109/led.2010.2040704 IEEE Electron Device Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers (IEEE) IEEE |
| spellingShingle | Lu, Bin Palacios, Tomas Piner, Edwin L. Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors |
| title | Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors |
| title_full | Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors |
| title_fullStr | Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors |
| title_full_unstemmed | Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors |
| title_short | Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors |
| title_sort | schottky drain technology for algan gan high electron mobility transistors |
| url | http://hdl.handle.net/1721.1/73494 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0003-2208-0665 |
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