High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation...

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Bibliographic Details
Main Authors: Hartono, Haryono, Chua, Soo-Jin, Fitzgerald, Eugene A., Song, T.L., Chen, Peng
Format: Article
Language:English
Published: 2004
Subjects:
high In InxGa1-xN
highly-mismatched systems
strain relaxation
Vpits
gallium nitride
metalorganic chemical vapor deposition
fGa/fIn
Online Access:http://hdl.handle.net/1721.1/7367

Internet

http://hdl.handle.net/1721.1/7367

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