Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on disc...

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Bibliographic Details
Main Authors: Kan, Eric Win Hong, Koh, B.H., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
Format: Article
Language:English
Published: 2004
Subjects:
Flash memory
nanocrystalline germanium
charge trapping
quantum dot
Vth
Online Access:http://hdl.handle.net/1721.1/7369

Internet

http://hdl.handle.net/1721.1/7369

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