Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits

Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits

Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures were created by thermocompression bonding and the bond toughness was measur...

Full description

Bibliographic Details
Main Authors: Leong, Hoi Liong, Gan, C.L., Pey, Kin Leong, Tsang, Chi-fo, Thompson, Carl V., Hongyu, Li
Format: Article
Language:English
Published: 2004
Subjects:
three dimensional integrated circuits
bonded copper interconnects
bonding
fabrication
Online Access:http://hdl.handle.net/1721.1/7372

Internet

http://hdl.handle.net/1721.1/7372

Similar Items