Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits

Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits

Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures were created by thermocompression bonding and the bond toughness was measur...

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Bibliographic Details
Main Authors: Leong, Hoi Liong, Gan, C.L., Pey, Kin Leong, Tsang, Chi-fo, Thompson, Carl V., Hongyu, Li
Format: Article
Language:English
Published: 2004
Subjects:
three dimensional integrated circuits
bonded copper interconnects
bonding
fabrication
Online Access:http://hdl.handle.net/1721.1/7372
Description
Summary:Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures were created by thermocompression bonding and the bond toughness was measured using the four-point test. The effects of bonding temperature, physical bonding and failure mechanisms were investigated. The surface effects on copper surface due to pre-bond clean (with glacial acetic acid) were also looked into. A maximum average bond toughness of approximately 35 J/m² was obtained bonding temperature 300 C.

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