Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits
Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures were created by thermocompression bonding and the bond toughness was measur...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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2004
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| Online Access: | http://hdl.handle.net/1721.1/7372 |
| _version_ | 1826200339873792000 |
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| author | Leong, Hoi Liong Gan, C.L. Pey, Kin Leong Tsang, Chi-fo Thompson, Carl V. Hongyu, Li |
| author_facet | Leong, Hoi Liong Gan, C.L. Pey, Kin Leong Tsang, Chi-fo Thompson, Carl V. Hongyu, Li |
| author_sort | Leong, Hoi Liong |
| collection | MIT |
| description | Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures were created by thermocompression bonding and the bond toughness was measured using the four-point test. The effects of bonding temperature, physical bonding and failure mechanisms were investigated. The surface effects on copper surface due to pre-bond clean (with glacial acetic acid) were also looked into. A maximum average bond toughness of approximately 35 J/m² was obtained bonding temperature 300 C. |
| first_indexed | 2024-09-23T11:34:57Z |
| format | Article |
| id | mit-1721.1/7372 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T11:34:57Z |
| publishDate | 2004 |
| record_format | dspace |
| spelling | mit-1721.1/73722019-04-12T08:39:34Z Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits Leong, Hoi Liong Gan, C.L. Pey, Kin Leong Tsang, Chi-fo Thompson, Carl V. Hongyu, Li three dimensional integrated circuits bonded copper interconnects bonding fabrication Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures were created by thermocompression bonding and the bond toughness was measured using the four-point test. The effects of bonding temperature, physical bonding and failure mechanisms were investigated. The surface effects on copper surface due to pre-bond clean (with glacial acetic acid) were also looked into. A maximum average bond toughness of approximately 35 J/m² was obtained bonding temperature 300 C. Singapore-MIT Alliance (SMA) 2004-12-10T14:24:14Z 2004-12-10T14:24:14Z 2005-01 Article http://hdl.handle.net/1721.1/7372 en Advanced Materials for Micro- and Nano-Systems (AMMNS); 11870 bytes application/pdf application/pdf |
| spellingShingle | three dimensional integrated circuits bonded copper interconnects bonding fabrication Leong, Hoi Liong Gan, C.L. Pey, Kin Leong Tsang, Chi-fo Thompson, Carl V. Hongyu, Li Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits |
| title | Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits |
| title_full | Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits |
| title_fullStr | Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits |
| title_full_unstemmed | Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits |
| title_short | Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits |
| title_sort | preliminary characterisation of low temperature bonded copper interconnects for 3 d integrated circuits |
| topic | three dimensional integrated circuits bonded copper interconnects bonding fabrication |
| url | http://hdl.handle.net/1721.1/7372 |
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