Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits
Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures were created by thermocompression bonding and the bond toughness was measur...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2004
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/7372 |