Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently remov...

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Bibliographic Details
Main Authors: Isaacson, David M., Taraschi, G., Pitera, Arthur J., Ariel, Nava, Fitzgerald, Eugene A., Langdo, Thomas A.
Format: Article
Language:English
Published: 2004
Subjects:
layer transfer
wafer bonding
strained silicone
SiGe graded buffer
Online Access:http://hdl.handle.net/1721.1/7373

Internet

http://hdl.handle.net/1721.1/7373

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