Injection velocity in thin-channel InAs HEMTs
We have experimentally extracted the virtual-source electron injection velocity in InAs HEMTs with a 5 nm thick channel. For long gate lengths, these devices exhibit noticeably worse injection velocity than thicker channel devices of a similar design. However, for very short gate lengths, as the dev...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/73857 |