BN/Graphene/BN Transistors for RF Applications
In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to en...
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
|
| Online Access: | http://hdl.handle.net/1721.1/74004 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0001-8217-8213 |