BN/Graphene/BN Transistors for RF Applications
In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to en...
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
|
| Online Access: | http://hdl.handle.net/1721.1/74004 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0001-8217-8213 |
| _version_ | 1826203708533243904 |
|---|---|
| author | Taychatanapat, Thiti Wang, Han Hsu, Allen Long Watanabe, Kenji Taniguchi, Takashi Jarillo-Herrero, Pablo Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Taychatanapat, Thiti Wang, Han Hsu, Allen Long Watanabe, Kenji Taniguchi, Takashi Jarillo-Herrero, Pablo Palacios, Tomas |
| author_sort | Taychatanapat, Thiti |
| collection | MIT |
| description | In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics. |
| first_indexed | 2024-09-23T12:41:49Z |
| format | Article |
| id | mit-1721.1/74004 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:41:49Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/740042022-09-28T09:28:39Z BN/Graphene/BN Transistors for RF Applications Taychatanapat, Thiti Wang, Han Hsu, Allen Long Watanabe, Kenji Taniguchi, Takashi Jarillo-Herrero, Pablo Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Physics Jarillo-Herrero, Pablo Taychatanapat, Thiti Wang, Han Hsu, Allen Long Jarillo-Herrero, Pablo Palacios, Tomas In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics. United States. Office of Naval Research (GATE MURI) U.S. Army Research Laboratory National Science Foundation (U.S.) (CAREER grant 0845287) 2012-10-16T13:03:07Z 2012-10-16T13:03:07Z 2011-08 2011-06 Article http://purl.org/eprint/type/JournalArticle 0741-3106 http://hdl.handle.net/1721.1/74004 Wang, Han et al. “BN/Graphene/BN Transistors for RF Applications.” IEEE Electron Device Letters 32.9 (2011): 1209-1211. https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0001-8217-8213 en_US http://dx.doi.org/ 10.1109/LED.2011.2160611 IEEE Electron Device Letters Creative Commons Attribution-Noncommercial-Share Alike 3.0 http://creativecommons.org/licenses/by-nc-sa/3.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Prof. Jarillo-Herrero via Mat Willmott |
| spellingShingle | Taychatanapat, Thiti Wang, Han Hsu, Allen Long Watanabe, Kenji Taniguchi, Takashi Jarillo-Herrero, Pablo Palacios, Tomas BN/Graphene/BN Transistors for RF Applications |
| title | BN/Graphene/BN Transistors for RF Applications |
| title_full | BN/Graphene/BN Transistors for RF Applications |
| title_fullStr | BN/Graphene/BN Transistors for RF Applications |
| title_full_unstemmed | BN/Graphene/BN Transistors for RF Applications |
| title_short | BN/Graphene/BN Transistors for RF Applications |
| title_sort | bn graphene bn transistors for rf applications |
| url | http://hdl.handle.net/1721.1/74004 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0001-8217-8213 |
| work_keys_str_mv | AT taychatanapatthiti bngraphenebntransistorsforrfapplications AT wanghan bngraphenebntransistorsforrfapplications AT hsuallenlong bngraphenebntransistorsforrfapplications AT watanabekenji bngraphenebntransistorsforrfapplications AT taniguchitakashi bngraphenebntransistorsforrfapplications AT jarilloherreropablo bngraphenebntransistorsforrfapplications AT palaciostomas bngraphenebntransistorsforrfapplications |