BN/Graphene/BN Transistors for RF Applications
In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to en...
Main Authors: | Taychatanapat, Thiti, Wang, Han, Hsu, Allen Long, Watanabe, Kenji, Taniguchi, Takashi, Jarillo-Herrero, Pablo, Palacios, Tomas |
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Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
Format: | Article |
Language: | en_US |
Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2012
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Online Access: | http://hdl.handle.net/1721.1/74004 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0001-8217-8213 |
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