Phonon Self-Energy Corrections to Nonzero Wave-Vector Phonon Modes in Single-Layer Graphene

Phonon Self-Energy Corrections to Nonzero Wave-Vector Phonon Modes in Single-Layer Graphene

Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q=0) wave vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene originating from a double-resonant Raman process with q≠0. The o...

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Bibliographic Details
Main Authors: Araujo, Paulo Antonio Trinidade, Mafra, Daniela Lopes, Sato, K., Saito, R., Kong, Jing, Dresselhaus, Mildred
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Physical Society 2012
Online Access:http://hdl.handle.net/1721.1/74069
https://orcid.org/0000-0001-8492-2261
https://orcid.org/0000-0003-0551-1208
https://orcid.org/0000-0003-2015-611X

Internet

http://hdl.handle.net/1721.1/74069
https://orcid.org/0000-0001-8492-2261
https://orcid.org/0000-0003-0551-1208
https://orcid.org/0000-0003-2015-611X

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