A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing
The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The grea...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
2004
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Subjects: | |
Online Access: | http://hdl.handle.net/1721.1/7455 |