Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAs...

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Bibliografiska uppgifter
Huvudupphovsmän: Sun, Z. Z., Yoon, Soon Fatt, Yew, K. C., Bo, B. X., Yan, Du An, Tung, Chih-Hang
Materialtyp: Artikel
Språk:English
Publicerad: 2004
Ämnen:
Gallium Arsenide Nitride
continuous-wave lasers
quantum dot structures
Arsenic
Gallium Arsenide
GaAsN barrier layer
Gallium Indium Nitride Arsenide
Nitrogen
Länkar:http://hdl.handle.net/1721.1/7466

Internet

http://hdl.handle.net/1721.1/7466

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