Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy
We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAs...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2004
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/7466 |
| _version_ | 1826209543684620288 |
|---|---|
| author | Sun, Z. Z. Yoon, Soon Fatt Yew, K. C. Bo, B. X. Yan, Du An Tung, Chih-Hang |
| author_facet | Sun, Z. Z. Yoon, Soon Fatt Yew, K. C. Bo, B. X. Yan, Du An Tung, Chih-Hang |
| author_sort | Sun, Z. Z. |
| collection | MIT |
| description | We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system. |
| first_indexed | 2024-09-23T14:24:08Z |
| format | Article |
| id | mit-1721.1/7466 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T14:24:08Z |
| publishDate | 2004 |
| record_format | dspace |
| spelling | mit-1721.1/74662019-04-12T07:21:03Z Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy Sun, Z. Z. Yoon, Soon Fatt Yew, K. C. Bo, B. X. Yan, Du An Tung, Chih-Hang Gallium Arsenide Nitride continuous-wave lasers quantum dot structures Arsenic Gallium Arsenide GaAsN barrier layer Gallium Indium Nitride Arsenide Nitrogen We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system. Singapore-MIT Alliance (SMA) 2004-12-14T21:20:13Z 2004-12-14T21:20:13Z 2005-01 Article http://hdl.handle.net/1721.1/7466 en Innovation in Manufacturing Systems and Technology (IMST); 398089 bytes application/pdf application/pdf |
| spellingShingle | Gallium Arsenide Nitride continuous-wave lasers quantum dot structures Arsenic Gallium Arsenide GaAsN barrier layer Gallium Indium Nitride Arsenide Nitrogen Sun, Z. Z. Yoon, Soon Fatt Yew, K. C. Bo, B. X. Yan, Du An Tung, Chih-Hang Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy |
| title | Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy |
| title_full | Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy |
| title_fullStr | Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy |
| title_full_unstemmed | Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy |
| title_short | Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy |
| title_sort | room temperature continuous wave operation of gainnas gaas quantum dot laser with gaasn barrier grown by solid source molecular beam epitaxy |
| topic | Gallium Arsenide Nitride continuous-wave lasers quantum dot structures Arsenic Gallium Arsenide GaAsN barrier layer Gallium Indium Nitride Arsenide Nitrogen |
| url | http://hdl.handle.net/1721.1/7466 |
| work_keys_str_mv | AT sunzz roomtemperaturecontinuouswaveoperationofgainnasgaasquantumdotlaserwithgaasnbarriergrownbysolidsourcemolecularbeamepitaxy AT yoonsoonfatt roomtemperaturecontinuouswaveoperationofgainnasgaasquantumdotlaserwithgaasnbarriergrownbysolidsourcemolecularbeamepitaxy AT yewkc roomtemperaturecontinuouswaveoperationofgainnasgaasquantumdotlaserwithgaasnbarriergrownbysolidsourcemolecularbeamepitaxy AT bobx roomtemperaturecontinuouswaveoperationofgainnasgaasquantumdotlaserwithgaasnbarriergrownbysolidsourcemolecularbeamepitaxy AT yanduan roomtemperaturecontinuouswaveoperationofgainnasgaasquantumdotlaserwithgaasnbarriergrownbysolidsourcemolecularbeamepitaxy AT tungchihhang roomtemperaturecontinuouswaveoperationofgainnasgaasquantumdotlaserwithgaasnbarriergrownbysolidsourcemolecularbeamepitaxy |