Etching of Graphene Devices with a Helium Ion Beam
We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended grap...
| 主要な著者: | , , , , , , |
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| その他の著者: | |
| フォーマット: | 論文 |
| 言語: | en_US |
| 出版事項: |
American Chemical Society (ACS)
2013
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| オンライン･アクセス: | http://hdl.handle.net/1721.1/76252 https://orcid.org/0000-0001-8217-8213 |