Etching of Graphene Devices with a Helium Ion Beam

We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended grap...

Full description

Bibliographic Details
Main Authors: Lemme, Max C., Bell, David C., Williams, James R., Stern, Lewis A., Baugher, Britton W. H., Jarillo-Herrero, Pablo, Marcus, Charles M.
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:en_US
Published: American Chemical Society (ACS) 2013
Online Access:http://hdl.handle.net/1721.1/76252
https://orcid.org/0000-0001-8217-8213

Similar Items