Etching of Graphene Devices with a Helium Ion Beam
We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended grap...
Main Authors: | Lemme, Max C., Bell, David C., Williams, James R., Stern, Lewis A., Baugher, Britton W. H., Jarillo-Herrero, Pablo, Marcus, Charles M. |
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Other Authors: | Massachusetts Institute of Technology. Department of Physics |
Format: | Article |
Language: | en_US |
Published: |
American Chemical Society (ACS)
2013
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Online Access: | http://hdl.handle.net/1721.1/76252 https://orcid.org/0000-0001-8217-8213 |
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