Low emissivity high-temperature tantalum thin film coatings for silicon devices
The authors study the use of thin ( ∼ 230 nm) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation loss, which is one of the dominant loss mechanisms at high temperatures (above...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Vacuum Society (AVS)
2013
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| Online Access: | http://hdl.handle.net/1721.1/77144 https://orcid.org/0000-0002-7184-5831 https://orcid.org/0000-0002-7244-3682 |