Low emissivity high-temperature tantalum thin film coatings for silicon devices
The authors study the use of thin ( ∼ 230 nm) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation loss, which is one of the dominant loss mechanisms at high temperatures (above...
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| Format: | Article |
| Language: | en_US |
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American Vacuum Society (AVS)
2013
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| Online Access: | http://hdl.handle.net/1721.1/77144 https://orcid.org/0000-0002-7184-5831 https://orcid.org/0000-0002-7244-3682 |
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| author | Rinnerbauer, Veronika Senkevich, Jay Soljacic, Marin Joannopoulos, John Celanovic, Ivan L. |
| author2 | Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies |
| author_facet | Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies Rinnerbauer, Veronika Senkevich, Jay Soljacic, Marin Joannopoulos, John Celanovic, Ivan L. |
| author_sort | Rinnerbauer, Veronika |
| collection | MIT |
| description | The authors study the use of thin ( ∼ 230 nm) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation loss, which is one of the dominant loss mechanisms at high temperatures (above 700 °C). The key factors to achieve such a coating are low emissivity in the near infrared and superior thermal stability at high operating temperatures. The authors investigated the emissivity of Ta coatings deposited on Si with respect to deposition parameters, and annealing conditions, and temperature. The authors found that after annealing at temperatures ≥ 900 °C the emissivity in the near infrared (1−3 μm) was reduced by a factor of 2 as compared to bare Si. In addition, the authors measured thermal emission at temperatures from 700 to 1000 °C, which is stable up to a heater temperature equal to the annealing temperature. Furthermore, Auger electron spectroscopy profiles of the coatings before and after annealing were taken to evaluate thermal stability. A thin (about 70 nm) Ta[subscript 2]O[subscript 5] layer was found to act as an efficient diffusion barrier between the Si substrate and the Ta layer to prevent Si diffusion. |
| first_indexed | 2024-09-23T15:01:02Z |
| format | Article |
| id | mit-1721.1/77144 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:01:02Z |
| publishDate | 2013 |
| publisher | American Vacuum Society (AVS) |
| record_format | dspace |
| spelling | mit-1721.1/771442022-09-29T12:03:26Z Low emissivity high-temperature tantalum thin film coatings for silicon devices Rinnerbauer, Veronika Senkevich, Jay Soljacic, Marin Joannopoulos, John Celanovic, Ivan L. Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies Massachusetts Institute of Technology. Department of Physics Massachusetts Institute of Technology. Research Laboratory of Electronics Rinnerbauer, Veronika Senkevich, Jay Joannopoulos, John D. Soljacic, Marin Celanovic, Ivan The authors study the use of thin ( ∼ 230 nm) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation loss, which is one of the dominant loss mechanisms at high temperatures (above 700 °C). The key factors to achieve such a coating are low emissivity in the near infrared and superior thermal stability at high operating temperatures. The authors investigated the emissivity of Ta coatings deposited on Si with respect to deposition parameters, and annealing conditions, and temperature. The authors found that after annealing at temperatures ≥ 900 °C the emissivity in the near infrared (1−3 μm) was reduced by a factor of 2 as compared to bare Si. In addition, the authors measured thermal emission at temperatures from 700 to 1000 °C, which is stable up to a heater temperature equal to the annealing temperature. Furthermore, Auger electron spectroscopy profiles of the coatings before and after annealing were taken to evaluate thermal stability. A thin (about 70 nm) Ta[subscript 2]O[subscript 5] layer was found to act as an efficient diffusion barrier between the Si substrate and the Ta layer to prevent Si diffusion. United States. Army Research Office. Institute for Soldier Nanotechnologies (Contract W911NF-07-D000) United States. Army Research Office. Institute for Soldier Nanotechnologies (Contract DAAD-19-02-D0002) United States. Dept. of Energy (Grant DE-SC0001299) 2013-02-15T15:40:40Z 2013-02-15T15:40:40Z 2012-11 2012-08 Article http://purl.org/eprint/type/JournalArticle 0734-2101 http://hdl.handle.net/1721.1/77144 Rinnerbauer, Veronika et al. “Low Emissivity High-temperature Tantalum Thin Film Coatings for Silicon Devices.” Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31.1 (2013): 011501. © 2013 American Vacuum Society https://orcid.org/0000-0002-7184-5831 https://orcid.org/0000-0002-7244-3682 en_US http://dx.doi.org/10.1116/1.4766295 Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Vacuum Society (AVS) MIT web domain |
| spellingShingle | Rinnerbauer, Veronika Senkevich, Jay Soljacic, Marin Joannopoulos, John Celanovic, Ivan L. Low emissivity high-temperature tantalum thin film coatings for silicon devices |
| title | Low emissivity high-temperature tantalum thin film coatings for silicon devices |
| title_full | Low emissivity high-temperature tantalum thin film coatings for silicon devices |
| title_fullStr | Low emissivity high-temperature tantalum thin film coatings for silicon devices |
| title_full_unstemmed | Low emissivity high-temperature tantalum thin film coatings for silicon devices |
| title_short | Low emissivity high-temperature tantalum thin film coatings for silicon devices |
| title_sort | low emissivity high temperature tantalum thin film coatings for silicon devices |
| url | http://hdl.handle.net/1721.1/77144 https://orcid.org/0000-0002-7184-5831 https://orcid.org/0000-0002-7244-3682 |
| work_keys_str_mv | AT rinnerbauerveronika lowemissivityhightemperaturetantalumthinfilmcoatingsforsilicondevices AT senkevichjay lowemissivityhightemperaturetantalumthinfilmcoatingsforsilicondevices AT soljacicmarin lowemissivityhightemperaturetantalumthinfilmcoatingsforsilicondevices AT joannopoulosjohn lowemissivityhightemperaturetantalumthinfilmcoatingsforsilicondevices AT celanovicivanl lowemissivityhightemperaturetantalumthinfilmcoatingsforsilicondevices |