Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

Cuprous oxide (Cu[subscript 2]O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu[subscript 2]O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall...

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Xehetasun bibliografikoak
Egile Nagusiak: Lee, Yun Seog, Winkler, Mark Thomas, Siah, Sin Cheng, Brandt, Riley E, Buonassisi, Anthony
Beste egile batzuk: Massachusetts Institute of Technology. Department of Mechanical Engineering
Formatua: Artikulua
Hizkuntza:en_US
Argitaratua: American Institute of Physics (AIP) 2013
Sarrera elektronikoa:http://hdl.handle.net/1721.1/78003
https://orcid.org/0000-0003-2785-552X
https://orcid.org/0000-0001-8345-4937