Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering
Cuprous oxide (Cu[subscript 2]O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu[subscript 2]O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall...
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/78003 https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 |
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| author | Lee, Yun Seog Winkler, Mark Thomas Siah, Sin Cheng Brandt, Riley E Buonassisi, Anthony |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Lee, Yun Seog Winkler, Mark Thomas Siah, Sin Cheng Brandt, Riley E Buonassisi, Anthony |
| author_sort | Lee, Yun Seog |
| collection | MIT |
| description | Cuprous oxide (Cu[subscript 2]O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu[subscript 2]O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu[subscript 2]O at temperatures above 250 K, reaching 62 cm[superscript 2]/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu[subscript 2]O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications. |
| first_indexed | 2024-09-23T10:39:46Z |
| format | Article |
| id | mit-1721.1/78003 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:39:46Z |
| publishDate | 2013 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/780032022-09-27T14:03:22Z Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering Lee, Yun Seog Winkler, Mark Thomas Siah, Sin Cheng Brandt, Riley E Buonassisi, Anthony Massachusetts Institute of Technology. Department of Mechanical Engineering Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity Massachusetts Institute of Technology. School of Engineering Lee, Yun Seog Winkler, Mark Thomas Siah, Sin Cheng Brandt, Riley E. Buonassisi, Tonio Cuprous oxide (Cu[subscript 2]O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu[subscript 2]O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu[subscript 2]O at temperatures above 250 K, reaching 62 cm[superscript 2]/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu[subscript 2]O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications. National Science Foundation (U.S.) (Award DMR-0819762) National Science Foundation (U.S.) (Award ECS-0335765) 2013-03-27T18:15:24Z 2013-03-27T18:15:24Z 2011-05 2011-03 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/78003 Lee, Yun Seog et al. “Hall Mobility of Cuprous Oxide Thin Films Deposited by Reactive Direct-current Magnetron Sputtering.” Applied Physics Letters 98.19 (2011): 192115. © 2011 American Institute of Physics https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 en_US http://dx.doi.org/10.1063/1.3589810 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Lee, Yun Seog Winkler, Mark Thomas Siah, Sin Cheng Brandt, Riley E Buonassisi, Anthony Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering |
| title | Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering |
| title_full | Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering |
| title_fullStr | Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering |
| title_full_unstemmed | Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering |
| title_short | Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering |
| title_sort | hall mobility of cuprous oxide thin films deposited by reactive direct current magnetron sputtering |
| url | http://hdl.handle.net/1721.1/78003 https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 |
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