Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

This manuscript concerns the application of infrared birefringence imaging (IBI) to quantify macroscopic and microscopic internal stresses in multicrystalline silicon (mc-Si) solar cell materials. We review progress to date, and advance four closely related topics. (1) We present a method to decoupl...

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Bibliographic Details
Main Authors: Ganapati, Vidya, Schoenfelder, Stephan, Castellanos, Sergio, Oener, Sebastian, Koepge, Ringo, Sampson, Aaron, Marcus, Matthew A., Lai, Barry, Morhenn, Humphrey, Hahn, Giso, Bagdahn, Joerg, Buonassisi, Tonio
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2013
Online Access:http://hdl.handle.net/1721.1/78004
https://orcid.org/0000-0003-3935-6701
https://orcid.org/0000-0001-8345-4937

Internet

http://hdl.handle.net/1721.1/78004
https://orcid.org/0000-0003-3935-6701
https://orcid.org/0000-0001-8345-4937

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