Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting
We describe a method to control the sub-surface dopant profile in “hyperdoped” silicon fabricated by ion implantation and pulsed laser melting. Dipping silicon ion implanted with sulfur into hydrofluoric acid prior to nanosecond pulsed laser melting leads to a tenfold increase in the rate of sulfur...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/78018 https://orcid.org/0000-0001-8345-4937 |