Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting
We describe a method to control the sub-surface dopant profile in “hyperdoped” silicon fabricated by ion implantation and pulsed laser melting. Dipping silicon ion implanted with sulfur into hydrofluoric acid prior to nanosecond pulsed laser melting leads to a tenfold increase in the rate of sulfur...
| Автори: | , , , , |
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| Інші автори: | |
| Формат: | Стаття |
| Мова: | en_US |
| Опубліковано: |
American Institute of Physics (AIP)
2013
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| Онлайн доступ: | http://hdl.handle.net/1721.1/78018 https://orcid.org/0000-0001-8345-4937 |
| _version_ | 1826201855999344640 |
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| author | Recht, Daniel Sullivan, Joseph Timothy Reedy, Robert Buonassisi, Tonio Aziz, Michael J. |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Recht, Daniel Sullivan, Joseph Timothy Reedy, Robert Buonassisi, Tonio Aziz, Michael J. |
| author_sort | Recht, Daniel |
| collection | MIT |
| description | We describe a method to control the sub-surface dopant profile in “hyperdoped” silicon fabricated by ion implantation and pulsed laser melting. Dipping silicon ion implanted with sulfur into hydrofluoric acid prior to nanosecond pulsed laser melting leads to a tenfold increase in the rate of sulfur evaporation from the surface of the melt. This results in an 80% reduction of the near-surface dopant concentration, effectively embedding the hyperdoped region in a layer up to 180 nm beneath the surface. This method should facilitate the development of blocked impurity band devices. |
| first_indexed | 2024-09-23T11:58:15Z |
| format | Article |
| id | mit-1721.1/78018 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T11:58:15Z |
| publishDate | 2013 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/780182022-10-01T07:19:39Z Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting Recht, Daniel Sullivan, Joseph Timothy Reedy, Robert Buonassisi, Tonio Aziz, Michael J. Massachusetts Institute of Technology. Department of Mechanical Engineering Sullivan, Joseph Timothy Buonassisi, Tonio We describe a method to control the sub-surface dopant profile in “hyperdoped” silicon fabricated by ion implantation and pulsed laser melting. Dipping silicon ion implanted with sulfur into hydrofluoric acid prior to nanosecond pulsed laser melting leads to a tenfold increase in the rate of sulfur evaporation from the surface of the melt. This results in an 80% reduction of the near-surface dopant concentration, effectively embedding the hyperdoped region in a layer up to 180 nm beneath the surface. This method should facilitate the development of blocked impurity band devices. Army Armament Research, Development, and Engineering Center (U.S.) (Contract W15QKN-07-P-0092) United States. Army Research Office (Grant W911NF-09-1-0470) National Science Foundation (U.S.) (Award ECCS-1102050) 2013-03-28T17:17:52Z 2013-03-28T17:17:52Z 2012-03 2012-02 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/78018 Recht, Daniel et al. “Controlling Dopant Profiles in Hyperdoped Silicon by Modifying Dopant Evaporation Rates During Pulsed Laser Melting.” Applied Physics Letters 100.11 (2012): 112112. ©2012 American Institute of Physics https://orcid.org/0000-0001-8345-4937 en_US http://dx.doi.org/10.1063/1.3695171 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Recht, Daniel Sullivan, Joseph Timothy Reedy, Robert Buonassisi, Tonio Aziz, Michael J. Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting |
| title | Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting |
| title_full | Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting |
| title_fullStr | Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting |
| title_full_unstemmed | Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting |
| title_short | Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting |
| title_sort | controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting |
| url | http://hdl.handle.net/1721.1/78018 https://orcid.org/0000-0001-8345-4937 |
| work_keys_str_mv | AT rechtdaniel controllingdopantprofilesinhyperdopedsiliconbymodifyingdopantevaporationratesduringpulsedlasermelting AT sullivanjosephtimothy controllingdopantprofilesinhyperdopedsiliconbymodifyingdopantevaporationratesduringpulsedlasermelting AT reedyrobert controllingdopantprofilesinhyperdopedsiliconbymodifyingdopantevaporationratesduringpulsedlasermelting AT buonassisitonio controllingdopantprofilesinhyperdopedsiliconbymodifyingdopantevaporationratesduringpulsedlasermelting AT azizmichaelj controllingdopantprofilesinhyperdopedsiliconbymodifyingdopantevaporationratesduringpulsedlasermelting |