Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon
In multicrystalline silicon (mc-Si), the presence of dislocation-rich areas limits solar cell conversion efficiencies. Previous studies have demonstrated that dislocation densities higher than 106 cm-2 can dramatically decrease the minority carrier lifetime. High dislocation densities, and their dec...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2013
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| Online Access: | http://hdl.handle.net/1721.1/78276 https://orcid.org/0000-0003-3935-6701 https://orcid.org/0000-0001-8345-4937 |