Defect reduction in Cu chemical-mechanical polishing
The chemical-mechanical polishing (CMP) of Cu is a critical step in the manufacture of ultra-large-scale integrated (ULSl) semiconductor devices. During this process, undesirable scratches are formed on the surface being polished [I -3]. Recent research suggests that the "killer" scratches...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2013
|
| Online Access: | http://hdl.handle.net/1721.1/78335 https://orcid.org/0000-0002-8480-5572 https://orcid.org/0000-0003-1607-3581 |